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Four-channel WDM transmitter with heterogeneously integrated III-V/Si photonics and low power 32 nm CMOS drivers
(Journal of Lightwave Technology, 2016)
We experimentally demonstrate a novel four-channel
wavelength division multiplexing transmitter operating at 1.3 μm
wavelength employing heterogeneously integrated III-V/Si photonic
circuit copackaged with low-power ...
Flexible silicon photonic transmitter with segmented modulator and 32 nm CMOS driver IC
(2016 Conference on Lasers and Electro-Optics, CLEO 2016, 2016)
We present a novel silicon photonic transmitter including 90nm CMOS segmented
modulator co-packaged with low power 32nm CMOS driver IC. Optical equalization is
demonstrated for the first time with the multi-segment ...
Diseño de un amplificador operacional de transconductancia aplicando técnicas de optimización multiobjetivo
(Instituto Tecnológico de Costa Rica, 2014-01)
In this paper, the problem at hand consists in the
sizing of an Operational Transconductance Amplifier
(OTA). The Pareto front is introduced as a useful
analysis concept in order to explore the design space
of such ...
A WDM 4x28Gbps integrated silicon photonic transmitter driven by 32nm CMOS driver ICs
(OSA - The Optical Society, 2015)
A four-channel WDM silicon photonic transmitter with integrated lasers and modulators driven by low-power 32nm CMOS drivers, is demonstrated to operate at a data rate of 4×28Gb/s with BER<10-12 and power consumption of 10.0pJ/bit.
A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
(OSA - The Optical Society, 2015)
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.