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Four-channel WDM transmitter with heterogeneously integrated III-V/Si photonics and low power 32 nm CMOS drivers
(Journal of Lightwave Technology, 2016)
We experimentally demonstrate a novel four-channel
wavelength division multiplexing transmitter operating at 1.3 μm
wavelength employing heterogeneously integrated III-V/Si photonic
circuit copackaged with low-power ...
PEDOT:PSS: A conductive and flexible polymer for sensor integration in Organ-on-Chip platforms
(Procedia Engineering, 2016)
Sensing and stimulating microstructures are necessary to develop more specialized and highly accurate Organ-on-Chip (OOC)
platforms. In this paper, we present the integration of a conductive polymer, poly (3,4-ethylened ...
30-Gb/s Optical Link Combining Heterogeneously Integrated III–V/Si Photonics With 32-nm CMOS Circuits
(Institute of Electrical and Electronics Engineers Inc., 2015-02)
We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect ...
Diseño de un amplificador operacional de transconductancia aplicando técnicas de optimización multiobjetivo
(Instituto Tecnológico de Costa Rica, 2014-01)
In this paper, the problem at hand consists in the
sizing of an Operational Transconductance Amplifier
(OTA). The Pareto front is introduced as a useful
analysis concept in order to explore the design space
of such ...
Flexible silicon photonic transmitter with segmented modulator and 32 nm CMOS driver IC
(2016 Conference on Lasers and Electro-Optics, CLEO 2016, 2016)
We present a novel silicon photonic transmitter including 90nm CMOS segmented
modulator co-packaged with low power 32nm CMOS driver IC. Optical equalization is
demonstrated for the first time with the multi-segment ...
A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
(OSA - The Optical Society, 2015)
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
Flexible transmitter employing Silicon-segmented Mach–zehnder modulator with 32-nm CMOS distributed driver
(Journal of Lightwave Technology, 2016)
We propose a flexible optical transmitter for shortreach optical interconnects that includes a silicon photonic segmented Mach-Zehnder modulator (MZM) driven by a distributed six-channel 32nm SOI CMOS driver integrated ...
An impedance spectroscopy ASIC for low-frequency characterization of biological samples
(Scopus, 2016)
This paper describes the design and testing of an ASIC for impedance spectroscopy of biological samples at
frequencies up to 40 kHz. The circuit is designed in the 350 nm AMS H35B4 technology and enables the
measurement ...
A simple approach for the design of operational transconductance amplifiers for low power signal processing
(IEEE, 2010)
A simple approach for the design, fabrication and
characterization of a operational trasconductance amplifier intended
for work in low power applications is reported in this
work. DC Measured parameters agree with ...
Energy-Aware Signal Integrity Analysis for High-Speed PCB Links
(Institute of Electrical and Electronics Engineers Inc., 2015-05)
This paper proposes a novel approach to evaluate design alternatives for high-speed links on printed circuit boards. The approach combines evaluations of signal integrity and link input power. For a comprehensive analysis, ...