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dc.contributor.authorRimolo-Donadio, Renato
dc.date.accessioned2017-04-05T17:20:53Z
dc.date.available2017-04-05T17:20:53Z
dc.date.issued2015
dc.identifier.citationhttps://www.scopus.com/inward/record.url?eid=2-s2.0-84930885978&partnerID=40&md5=dc087fa56741496a301cd372bd63ad7des
dc.identifier.isbn978-155752937-4
dc.identifier.urihttps://hdl.handle.net/2238/6942
dc.description.abstractA four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.es
dc.description.sponsorshipIEEE Communications Society,IEEE Photonics Society,The Optical Societes
dc.language.isoeng_USes
dc.publisherOSA - The Optical Societyes
dc.rightsacceso abierto*
dc.rights.urihttps://creativecommons.org/licenses/by-nc/3.0/cr/*
dc.sourceB. G. Lee, R. Rimolo-Donadio, A. Rylyakov, J. Proesel, J. Bulzacchelli, C. W. Baks, M. Meghelli, C. L. Schow, A. Ramaswamy, J. E. Roth, J. Shin, B. Koch, D. K. Sparacin, and G. Fish, "A WDM-Compatible 4 × 32-Gb/s CMOS-Driven Electro-Absorption Modulator Array," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2015), paper Tu3G.3.
dc.subjectFibra ópticaes
dc.subjectCMOSes
dc.subjectModuladoreses
dc.subjectComunicación ópticaes
dc.subjectTransferencia de datoses
dc.subjectResearch Subject Categories::TECHNOLOGY::Electrical engineering, electronics and photonics::Electrical engineeringes
dc.titleA WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator arrayes
dc.typepresentación de congresoes


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