A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
Date
2015Metadata
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A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER < 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
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B. G. Lee, R. Rimolo-Donadio, A. Rylyakov, J. Proesel, J. Bulzacchelli, C. W. Baks, M. Meghelli, C. L. Schow, A. Ramaswamy, J. E. Roth, J. Shin, B. Koch, D. K. Sparacin, and G. Fish, "A WDM-Compatible 4 × 32-Gb/s CMOS-Driven Electro-Absorption Modulator Array," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2015), paper Tu3G.3.Share
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